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| MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 E2 480.25 C2E1 E2 E2 B2 30 6 15 62 B1 E1 C1 10.5 6 B2X B1X C1 C2E1 E2 9 B1X 14 8 15.3 3 17 25 17 25 17 21.5 3 8 1.8 E1 B1 3-M6 8 8 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 150 150 1000 8 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=150A, IB=3A -IC=150A (diode forward voltage) IC=150A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 400 3.0 3.5 1.8 -- 3.0 15 3.0 0.125 0.60 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) IB=2A DC CURRENT GAIN hFE 160 IB=1A 120 IB=0.5A IB=0.2A 80 IB=0.1A VCE=5.0V VCE=2.8V 40 Tj=25C Tj=25C Tj=125C 0 0 1 2 3 4 5 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) VBE(sat) VCE=2.8V Tj=25C SATURATION VOLTAGE VCE(sat) IB=3A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 ts COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=150A 4 3 IC=50A IC=100A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 SWITCHING TIME ton, ts, tf (s) tf VCC=600V IB1=-IB2=3A Tj=25C Tj=125C ton 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 VCC=600V IB1=3A IC=150A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 320 Tj=125C COLLECTOR CURRENT IC (A) ts, tf (s) 280 IB2=-3A 240 200 160 120 80 40 0 0 400 800 1200 1600 IB2=-6A ts SWITCHING TIME tf 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 D C DERATING FACTOR OF F. B. S. O. A. 100 COLLECTOR CURRENT IC (A) 50s 100s 90 SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 0.16 0.14 0.12 1m s 200 VCE (V) s CASE TEMPERATURE TC (C) 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Tj=25C Tj=125C Zth (j-c) (C/ W) 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1600 1400 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=3A 3 Tj=25C 2 Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2 10 2 Irr 10 1 trr (s) 10 0 Feb.1999 Qrr trr 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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